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Communication Dans Un Congrès Année : 2021

Performance Projection of GaN HEMT: Experimental Verification Using Curtice Model

Shariful Islam
  • Fonction : Auteur
Mohammad Abdul Alim
Anika Tahsin
  • Fonction : Auteur
Famin Rahman Rakib
  • Fonction : Auteur
Refat Uddin Rafi
  • Fonction : Auteur

Résumé

This work deals with the performance projection of GaN HEMT towards experimental verification using Curtice model. To emphasize and identify their effects on the linear and saturation regions, we adjusted the three parameters employed in the Curtice model to fit the experimental data of the I-V characteristics curve with varying values of α,λ , and β . Apart from that, we will also investigate the transconductance and output conductance and compare the both simulated and experimental data. The DC results of the studied GaN HEMT were well matched by measurements and simulations.
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Dates et versions

hal-03612338 , version 1 (17-03-2022)

Identifiants

Citer

Shariful Islam, Mohammad Abdul Alim, Anika Tahsin, Famin Rahman Rakib, Refat Uddin Rafi, et al.. Performance Projection of GaN HEMT: Experimental Verification Using Curtice Model. 2021 International Conference on Electronics, Communications and Information Technology (ICECIT), Sep 2021, Khulna, Bangladesh. pp.1-4, ⟨10.1109/ICECIT54077.2021.9641374⟩. ⟨hal-03612338⟩
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