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Article Dans Une Revue Microelectronic Engineering Année : 2021

Crystallization behavior of N -doped Ge-rich GST thin films and nanostructures: An in-situ synchrotron X-ray diffraction study

Résumé

Ge-rich and N-doped Ge-Sb-Te thin films and patterned structures for memory applications are investigated in situ during annealing up to 500 • C with a heating rate of 2 • C/min using synchrotron x-ray diffraction. The initial material is amorphous. Under these annealing conditions, Ge crystallization occurs at 340 • C and precedes the one of cubic Ge 2 Sb 2 Te 5 by about 15 • C. In situ monitoring of diffraction allows for a quantification of crystallized quantity, grain size and elastic strain during the material transformation. Increasing N doping reduces the amount of crystallized Ge and Ge grain size. These results bring important insights into the multiphase crystallization of Ge-rich GST phase change materials for memory applications.
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hal-03609171 , version 1 (15-03-2022)

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O. Thomas, C. Mocuta, M. Putero, M.-I. Richard, P. Boivin, et al.. Crystallization behavior of N -doped Ge-rich GST thin films and nanostructures: An in-situ synchrotron X-ray diffraction study. Microelectronic Engineering, 2021, 244-246, pp.111573. ⟨10.1016/j.mee.2021.111573⟩. ⟨hal-03609171⟩
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