16kbit HfO 2 :Si-based 1T-1C FeRAM Arrays Demonstrating High Performance Operation and Solder Reflow Compatibility - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2021

16kbit HfO 2 :Si-based 1T-1C FeRAM Arrays Demonstrating High Performance Operation and Solder Reflow Compatibility

B Giraud
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  • IdHAL : bg-giraud
U Schroeder
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S Slesazeck
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T Mikolajick
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Résumé

16kbit 1T-1C FeRAM arrays are demonstrated at 130nm node with TiN/HfO2:Si/TiN ferroelectric capacitors integrated in the Back-End-of-Line (BEOL). Zero bit failure is reported at the array level, with memory window fully open down to 2.5V programming voltage, capacitor area down to 0.16µm² and switching speed down to 4ns. Promising endurance is reported at the array level up to 10 7 cycles. For the first time, solder reflow compatibility is demonstrated for HfO2-based FeRAM. These results pave the way to competitive ultra-low power embedded non-volatile memories at more advanced nodes.
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Dates et versions

hal-03596974 , version 1 (04-03-2022)

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T Francois, J Coignus, A Makosiej, B Giraud, C Carabasse, et al.. 16kbit HfO 2 :Si-based 1T-1C FeRAM Arrays Demonstrating High Performance Operation and Solder Reflow Compatibility. 67th Annual IEEE International Electron Devices Meeting (IEDM) 2021, Dec 2021, San Francisco, United States. ⟨10.1109/IEDM19574.2021.9720640⟩. ⟨hal-03596974⟩
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