High-Performance Operation and Solder Reflow Compatibility in BEOL-Integrated 16-Kb HfO₂: Si-Based 1T-1C FeRAM Arrays
Résumé
16kbit 1T-1C FeRAM arrays are demonstrated at 130nm node with TiN/HfO2:Si/TiN ferroelectric capacitors integrated in the Back-End-of-Line (BEOL). 0 state and 1 state distributions measured on the arrays demonstrate perfect yield at 4.8V operation, with extrapolations suggesting memory window is still open at 6 sigma statistics. Programming speed down to 4ns at 4V is highlighted at the array level, together with endurance up to 10 7 cycles. Promising data retention up to 10 4 s at 125°C is measured on the arrays and, for the first time, solder reflow compatibility is demonstrated for HfO2-based FeRAM. Memory window on 16kbit arrays remains open down to 2.5V programming voltage and when capacitor area decreases from 0.36µm² down to 0.16µm², with calculated programming energy lower than 100fJ/bit. These results pave the way to competitive ultra-low power embedded non-volatile memories at more advanced nodes.
Mots clés
High Performance Operation and Solder Reflow Compatibility in BEOL-integrated 16kbit HfO2:Si-based 1T-1C FeRAM Arrays 16kbit array
ferroelectric random-access memory (FeRAM)
130-nm technology node
HfO2:Si
hafnium oxide
solder reflow
data retention
endurance
emerging memory
nonvolatile memory (NVM)
ferroelectric memories
Fichier principal
Francois, TED2021, High Performance Operation and Solder Reflow Compatibility in BEOL-integrated 16kbit HfO2Si-based 1T-1C FeRAM Arrays.pdf (1.74 Mo)
Télécharger le fichier
| Origine | Fichiers produits par l'(les) auteur(s) |
|---|