Spatial anisotropy of the exchange integrals in Mn-doped wurtzite-type semiconductors
Résumé
We propose an alternative explanation, as compared to one reported in the literature, to the experimentally observed spatial anisotropy ξ = J 1 /J in 1 (J 1 = J in 1 − J out 1) of the nearest neighbor exchange integral J 1 in Mndoped semiconductors with the wurtzite structure. We show that the main contribution to ξ is ferromagnetic and comes from a looped exchange path which involves two distinct anions. A comparison between our calculations, that use the results of photoemission spectroscopy as input parameters, and the available data for three wurtzite materials, CdS:Mn, CdSe:Mn, and ZnO:Mn, shows a good quantitative agreement between theory and experiment in the case of cadmium compounds and only a qualitative one in the case of ZnO:Mn.
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