Low-Temperature-grown GaAs photoconductors suitable for 1550nm-wavelength illumination - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2021

Low-Temperature-grown GaAs photoconductors suitable for 1550nm-wavelength illumination

Résumé

In this communication, we show that ultrafast photoconductors based on low-temperature-grown Gallium Arsenide material exhibit photoresponse values reaching 11 mA/W under 1550 nm CW excitation. This is obtained by using an optical microcavity based on a buried metal layer acting as back reflecting mirror and a top grating electrode in order to improve the external quantum efficiency and by decreasing the post growth annealing temperature of the LT-GaAs layer downto 450 °C. Frequency response measurements are carried out up to 67 GHz by using a 1550-nm-wavelength optical-heterodyne experiment.
Fichier non déposé

Dates et versions

hal-03584631 , version 1 (22-02-2022)

Identifiants

Citer

Charbel Tannoury, Maximilien Billet, Christophe Coinon, Jean-Francois Lampin, Emilien Peytavit. Low-Temperature-grown GaAs photoconductors suitable for 1550nm-wavelength illumination. 2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz), Aug 2021, Chengdu, China. pp.1-2, ⟨10.1109/IRMMW-THz50926.2021.9567204⟩. ⟨hal-03584631⟩
11 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More