High Rectification Ratio in Polymer Diode Rectifier through Interface Engineering with Self-Assembled Monolayer - Archive ouverte HAL
Article Dans Une Revue Electronic Materials Année : 2021

High Rectification Ratio in Polymer Diode Rectifier through Interface Engineering with Self-Assembled Monolayer

Résumé

In this work, we demonstrate P3HT (poly 3-hexylthiophene) organic rectifier diode both in rigid and flexible substrate with a rectification ratio up to 106. This performance has been achieved through tuning the work function of gold with a self-assembled monolayer of 2,3,4,5,6-pentafluorobenzenethiol (PFBT). The diode fabricated on flexible paper substrate shows a very good electrical stability under bending tests and the frequency response is estimated at more than 20 MHz which is sufficient for radio frequency identification (RFID) applications. It is also shown that the low operating voltage of this diode can be a real advantage for use in a rectenna for energy harvesting systems. Simulations of the diode structure show that it can be used at GSM and Wi-Fi frequencies if the diode capacitance is reduced to a few pF and its series resistance to a few hundred ohms. Under these conditions, the DC voltages generated by the rectenna can reach a value up to 1 V.
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hal-03575256 , version 1 (19-05-2022)

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Khaoula Ferchichi, Sébastien Pecqueur, David Guérin, Ramzi Bourguiga, Kamal Lmimouni. High Rectification Ratio in Polymer Diode Rectifier through Interface Engineering with Self-Assembled Monolayer. Electronic Materials, 2021, 2 (4), pp.445-453. ⟨10.3390/electronicmat2040030⟩. ⟨hal-03575256⟩
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