Many charge controlled models of memristor have been proposed for various applications. First, the original linear dopant drift model suffers discontinuities close to the memristor layer boundaries. Then, the nonlinear dopant drift model improves the memristor behavior near these boundaries but lacks physical meaning and fails for some initial conditions. Finally, we present a new model to correct these defects. We compare these three models in specific situations: (1) when a sine input voltage is applied to the memristor, (2) when a constant voltage is applied to it, and (3) how a memristor transfers charges in a circuit point of view involving resistance-capacitance network. In the later case, we show that our model allows for study of the memristor behavior with phase portraits for any initial conditions and without boundary limitations.