Mesoporous GaN Made by Selective Area Sublimation for Efficient Light Emission on Si Substrate - Archive ouverte HAL Access content directly
Journal Articles physica status solidi (b) Year : 2018

Mesoporous GaN Made by Selective Area Sublimation for Efficient Light Emission on Si Substrate

Stéphane Vézian
Jean Massies
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hal-03553871 , version 1 (03-02-2022)

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Benjamin Damilano, Stéphane Vézian, Jean Massies. Mesoporous GaN Made by Selective Area Sublimation for Efficient Light Emission on Si Substrate. physica status solidi (b), 2018, 255 (5), pp.1700392. ⟨10.1002/pssb.201700392⟩. ⟨hal-03553871⟩
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