Design and simulation of InGaN/GaN p-i-n photodiodes - Archive ouverte HAL Access content directly
Poster Communications Year : 2018
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hal-03552772 , version 1 (02-02-2022)

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  • HAL Id : hal-03552772 , version 1

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Mourad Elbar, Bandar Alshehri, Souad Tobbeche, El Hadj Dogheche. Design and simulation of InGaN/GaN p-i-n photodiodes. 12th International Conference on Nitride Semiconductors ICNS-12, Jul 2017, Strasbourg, France. 2018. ⟨hal-03552772⟩
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