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Article Dans Une Revue Nanotechnology Année : 2022

In-plane InGaAs/Ga(As)Sb nanowire based tunnel junctions grown by selective area molecular beam epitaxy

Résumé

In-plane InGaAs/Ga(As)Sb heterojunction tunnel diodes are fabricated by selective area molecular beam epitaxy with two different architectures: either radial InGaAs core/Ga(As)Sb shell nanowires or axial InGaAs/GaSb heterojunctions. In the former case, we unveil the impact of strain relaxation and alloy composition fluctuations at the nanoscale on the tunneling properties of the diodes, whereas in the latter case we demonstrate that template assisted molecular beam epitaxy can be used to achieve a very precise control of tunnel diodes dimensions at the nanoscale with a scalable process. In both cases, negative differential resistances with large peak current densities are achieved.
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Dates et versions

hal-03547003 , version 1 (28-01-2022)

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Alexandre Bucamp, Christophe Coinon, Sylvie Lepilliet, David Troadec, Gilles Patriarche, et al.. In-plane InGaAs/Ga(As)Sb nanowire based tunnel junctions grown by selective area molecular beam epitaxy. Nanotechnology, 2022, 33 (14), pp.145201. ⟨10.1088/1361-6528/ac45c5⟩. ⟨hal-03547003⟩
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