Effects of Heavy Doping and Impurity Size on Minority-Carrier Transport Parameters in Heavily (lightly) Doped n(p)-Type Crystalline Silicon at 300K, Applied to determine the Performance of n+-p Junction Solar Cells - Archive ouverte HAL
Article Dans Une Revue SCIREA Année : 2019

Effects of Heavy Doping and Impurity Size on Minority-Carrier Transport Parameters in Heavily (lightly) Doped n(p)-Type Crystalline Silicon at 300K, Applied to determine the Performance of n+-p Junction Solar Cells

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Physique [physics]

Joelle Sulian  : Connectez-vous pour contacter le contributeur

https://hal.science/hal-03544480

Soumis le : mercredi 26 janvier 2022-16:42:49

Dernière modification le : mercredi 4 décembre 2024-17:23:04

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hal-03544480 , version 1 (26-01-2022)

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  • HAL Id : hal-03544480 , version 1

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Van-Cong Huynh, Paul Blaise, Olivier Henri-Rousseau. Effects of Heavy Doping and Impurity Size on Minority-Carrier Transport Parameters in Heavily (lightly) Doped n(p)-Type Crystalline Silicon at 300K, Applied to determine the Performance of n+-p Junction Solar Cells. SCIREA, 2019, 4 (5), pp.126.162. ⟨hal-03544480⟩

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