Best Performance of n+ -p Crystalline Silicon Junction Solar Cells at 300 K, Due to the Effects of Heavy Doping and Impurity Size. I - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue American Journal of Modern Physics Année : 2019

Best Performance of n+ -p Crystalline Silicon Junction Solar Cells at 300 K, Due to the Effects of Heavy Doping and Impurity Size. I

Dates et versions

hal-03544380 , version 1 (26-01-2022)

Identifiants

Citer

Huynh van Cong, Paul Blaise, Olivier Henri-Rousseau. Best Performance of n+ -p Crystalline Silicon Junction Solar Cells at 300 K, Due to the Effects of Heavy Doping and Impurity Size. I. American Journal of Modern Physics, 2019, 8 (2), pp.18-36. ⟨10.11648/j.ajmp.20190802.12⟩. ⟨hal-03544380⟩

Collections

UNIV-PERP LAMPS
18 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More