Design of zero bias power detectors towards power consumption optimization in 5G devices
Issa Alaji
(1)
,
Walid Aouimeur
,
Haitham Ghanem
(2)
,
Etienne Okada
(1, 3)
,
Sylvie Lepilliet
(3, 1)
,
Daniel Gloria
(2)
,
Guillaume Ducournau
(1, 4)
,
Christophe Gaquière
(1, 5)
Walid Aouimeur
- Fonction : Auteur
Etienne Okada
- Fonction : Auteur
- PersonId : 745489
- IdHAL : etienne-okada
Sylvie Lepilliet
- Fonction : Auteur
- PersonId : 745478
- IdHAL : sylvie-lepilliet
Guillaume Ducournau
- Fonction : Auteur
- PersonId : 745611
- IdHAL : guillaume-ducournau
- ORCID : 0000-0002-9171-4767
- IdRef : 090868382
Christophe Gaquière
- Fonction : Auteur
- PersonId : 746853
- IdHAL : christophe-gaquiere
- ORCID : 0000-0003-3082-2489
- IdRef : 059765615
Résumé
This paper presents the design and characterization of zero bias power detectors, based on MOSFET transistors, integrated in SiGe 55-nm BiCMOS technology from ST-Microelectronics. The working frequency bands of the circuits are located in the range (38–55) GHz, dedicated to optimize the power consumption in 5G devices. Three NMOS categories available in the technology are used (GP, LP, HPA), the aim is to design several detectors based on different NMOS categories in order to compare their performances. In addition, a detector based on a stack of 6 LP transistors is designed in order to increase the dynamic range. Compared to recent works, the HPA detector exhibits a very good performance with very low noise equivalent power value (NEP) 3.8 pW/Hz and large dynamic range of 67 dB. The extracted voltage sensitivity values of these detectors are between (850–1400) V/W showing good agreements with the simulation results. © 2021 Elsevier Ltd
Domaines
Physique [physics]Format du dépôt | Fichier |
---|---|
Type de dépôt | Article dans une revue |
Titre |
en
Design of zero bias power detectors towards power consumption optimization in 5G devices
|
Résumé |
en
This paper presents the design and characterization of zero bias power detectors, based on MOSFET transistors, integrated in SiGe 55-nm BiCMOS technology from ST-Microelectronics. The working frequency bands of the circuits are located in the range (38–55) GHz, dedicated to optimize the power consumption in 5G devices. Three NMOS categories available in the technology are used (GP, LP, HPA), the aim is to design several detectors based on different NMOS categories in order to compare their performances. In addition, a detector based on a stack of 6 LP transistors is designed in order to increase the dynamic range. Compared to recent works, the HPA detector exhibits a very good performance with very low noise equivalent power value (NEP) 3.8 pW/Hz and large dynamic range of 67 dB. The extracted voltage sensitivity values of these detectors are between (850–1400) V/W showing good agreements with the simulation results. © 2021 Elsevier Ltd
|
Auteur(s) |
Issa Alaji
1
, Walid Aouimeur
, Haitham Ghanem
2
, Etienne Okada
1, 3
, Sylvie Lepilliet
3, 1
, Daniel Gloria
2
, Guillaume Ducournau
1, 4
, Christophe Gaquière
1, 5
1
IEMN -
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
( 1066983 )
- [Univ. Lille, CNRS, Centrale Lille Institut, Junia, Univ. Polytechnique Hauts-de-France] ––
Laboratoire Central – Cité Scientifique – Avenue Poincaré – CS 60069 – 59652 VILLENEUVE D’ASCQ CEDEX
- France
2
ST-CROLLES -
STMicroelectronics [Crolles]
( 23639 )
- 850 rue Jean Monnet BP 16 38926 Crolles
- France
3
PCMP - IEMN -
Plateforme de Caractérisation Multi-Physiques - IEMN
( 1067502 )
- France
4
PHOTONIQUE THZ - IEMN -
Photonique THz - IEMN
( 1067488 )
- Groupe Photonique THz - IEMN UMR8520 - (Terahertz Photonics)
- France
5
PUISSANCE - IEMN -
Puissance - IEMN
( 1067481 )
- Groupe Puissance - (Microwave Power Devices group) - IEMN UMR8520
- France
|
Nom de la revue |
|
Langue du document |
Anglais
|
Volume |
111
|
Page/Identifiant |
105035
|
Date de publication |
2021-05
|
Date de publication électronique |
2021-03-19
|
Audience |
Internationale
|
Vulgarisation |
Non
|
Comité de lecture |
Oui
|
Licence |
Paternité - Pas d'utilisation commerciale
|
Référence interne |
|
Domaine(s) |
|
Collaboration/Projet |
|
Financement |
|
Mots-clés |
en
55-nm BiCMOS, 5G and IoT sensors, Dynamic range, NEP, Zero bias detector
|
DOI | 10.1016/j.mejo.2021.105035 |
PII | S0026-2692(21)00046-X |
Origine :
Fichiers produits par l'(les) auteur(s)
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