Single-Electron Tunneling PbS/InP Heterostructure Nanoplatelets for Synaptic Operations
Résumé
Power consumption, thermal management, and wiring challenge of the binary serial architecture drive the search for alternative paradigms to computing. Of special interest is neuromorphic computing, in which materials and device structures are designed to mimic neuronal functionalities with energy-efficient non-linear responses and both short- and long-term plasticities. In this work, we explore and report on the enabling potential of single-electron tunneling (SET) in PbS nanoplatelets epitaxially grown in the liquid phase on InP, which present these key features. By extrapolating the experimental data in the SET regime, we predict and model synaptic operations. The low-energy (
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Sciences de l'ingénieur [physics]Collection IEMN : Connectez-vous pour contacter le contributeur
https://hal.science/hal-03540799
Soumis le : lundi 24 janvier 2022-11:26:17
Dernière modification le : mardi 4 juin 2024-13:26:03
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Identifiants
- HAL Id : hal-03540799 , version 1
- DOI : 10.1021/acsami.1c06096
- WOS : 000687172000050
Citer
Paulo Jarschel, Jin Ho Kim, Louis Biadala, Maxime Berthe, Yannick Lambert, et al.. Single-Electron Tunneling PbS/InP Heterostructure Nanoplatelets for Synaptic Operations. ACS Applied Materials & Interfaces, 2021, 13 (32), pp.38450-38457. ⟨10.1021/acsami.1c06096⟩. ⟨hal-03540799⟩
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