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Journal Articles Optics Express Year : 2022

Up to 300 K lasing with GeSn-On-Insulator microdisk resonators

A Bjelajac
  • Function : Author
M Gromovyi
E Sakat
B Wang
G Patriarche
N Pauc
  • Function : Author
V Calvo
  • Function : Author
F Boeuf
  • Function : Author
A Chelnokov
  • Function : Author
V Reboud
  • Function : Author
M Frauenrath
  • Function : Author
J-M Hartmann
  • Function : Author

Abstract

GeSn alloys are the most promising direct band gap semiconductors to demonstrate full CMOS-compatible laser integration with a manufacturing from Group-IV materials. Here, we show that room temperature lasing, up to 300 K, can be obtained with GeSn. This is achieved in microdisk resonators fabricated on a GeSn-On-Insulator platform by combining strain engineering with a thick layer of high Sn content GeSn.
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Dates and versions

hal-03539837 , version 1 (22-01-2022)

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A Bjelajac, M Gromovyi, E Sakat, B Wang, G Patriarche, et al.. Up to 300 K lasing with GeSn-On-Insulator microdisk resonators. Optics Express, 2022, 30, pp.3954-3961. ⟨10.1364/oe.449895⟩. ⟨hal-03539837⟩
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