Enhancement of energy storage in epitaxial PbZrO3 antiferroelectric films using strain engineering - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Applied Physics Letters Année : 2014

Enhancement of energy storage in epitaxial PbZrO3 antiferroelectric films using strain engineering

Résumé

We demonstrate an approach to enhance the energy storage density W of antiferroelectric film through simple altering a crystallographic orientation of the substrate. We reveal that the antiferroelectric phase stability of PbZrO3 can be enhanced for the (110) or (111) SrTiO3 substrate orientation, thus suppresses the antiferroelectric-ferroelectric phase transition to higher electric field with ~120 kV/cm increment. In addition, the polarization values of these films are also favorably increased hence increases W by 5.3 J/cm3 at 700 kV/cm. The observed enhancement is found to originate from a high sensitivity of phase transition to mechanical confinements due to the volume expansion at the transition.
Fichier principal
Vignette du fichier
Ge_2014_1.4896156.pdf (1.35 Mo) Télécharger le fichier
Origine : Fichiers éditeurs autorisés sur une archive ouverte

Dates et versions

hal-03525829 , version 1 (27-05-2022)

Identifiants

Citer

Jun Ge, Denis Remiens, Xianlin Dong, Ying Chen, Jean Costecalde, et al.. Enhancement of energy storage in epitaxial PbZrO3 antiferroelectric films using strain engineering. Applied Physics Letters, 2014, 105 (11), pp.112908. ⟨10.1063/1.4896156⟩. ⟨hal-03525829⟩
23 Consultations
69 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More