Dielectric relaxation analysis of Pb(Zr<sub>0.54</sub>,Ti<sub>0.46</sub>)O<sub>3</sub> thin films: electric field dependence - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of Applied Physics Année : 2014

Dielectric relaxation analysis of Pb(Zr0.54,Ti0.46)O3 thin films: electric field dependence

Résumé

350 nm-thick Perovskite PbZr0.54Ti0.46O3 (PZT) thin films were deposited on Al2O3 substrates by sputtering with and without an additional 10-nm-thick TiOx buffer layer. X-ray diffraction patterns showed that in presence of TiOx buffer layer, PZT film was highly oriented along the (111) direction film, whereas the unbuffered, counterpart was polycrystalline. A full wave electromagnetic analysis using a vector finite element method was performed to determine the tunability and the complex permittivity up to 67 GHz. A comparison between the electromagnetic analysis and Cole-Cole relaxation model was proposed. Through an original study of the relaxation time as a function of the electric field, values, such as 2 ps and 0.6 ps, were estimated for EDC = 0 kV/cm and 235 kV/cm, respectively, and in both cases (111)-PZT and polycrystalline-PZT. The distribution of relaxation times is found to be larger for (111)-PZT film, which is probably related to the film microstructure.
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Dates et versions

hal-03525742 , version 1 (25-05-2022)

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Freddy Ponchel, N. Sama, Denis Remiens, T. Lasri. Dielectric relaxation analysis of Pb(Zr0.54,Ti0.46)O3 thin films: electric field dependence. Journal of Applied Physics, 2014, 116 (24), pp.244108. ⟨10.1063/1.4904514⟩. ⟨hal-03525742⟩
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