Improved Performance of YIG (Y3Fe5O12) Films Grown on Pt-Buffered Si Substrates by Chemical Solution Deposition Technique
Résumé
High-quality Yttrium iron garnet (YIG) films with crack-free surface and improved magnetic performance were grown on platinum (Pt)-buffered Si substrates by chemical solution deposition technique. The saturation magnetization of obtained YIG films can reach 124 emu/cm3, which was the 88% theoretical value of YIG single crystal. The effects of annealing condition were also discussed. When annealed at 750°C for 1 h, YIG films showed a very small coercive field of 12 Oe and the peak-to-peak ferromagnetic resonance linewidth can be as low as 95 Oe at 9.10 GHz. The results demonstrated that YIG films prepared on Pt-buffered Si substrates can be beneficial to the application of YIG films to integrated devices.
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