Improved Performance of YIG (Y<sub>3</sub>Fe<sub>5</sub>O<sub>12</sub>) Films Grown on Pt-Buffered Si Substrates by Chemical Solution Deposition Technique - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of the American Ceramic Society Année : 2016

Improved Performance of YIG (Y3Fe5O12) Films Grown on Pt-Buffered Si Substrates by Chemical Solution Deposition Technique

Résumé

High-quality Yttrium iron garnet (YIG) films with crack-free surface and improved magnetic performance were grown on platinum (Pt)-buffered Si substrates by chemical solution deposition technique. The saturation magnetization of obtained YIG films can reach 124 emu/cm3, which was the 88% theoretical value of YIG single crystal. The effects of annealing condition were also discussed. When annealed at 750°C for 1 h, YIG films showed a very small coercive field of 12 Oe and the peak-to-peak ferromagnetic resonance linewidth can be as low as 95 Oe at 9.10 GHz. The results demonstrated that YIG films prepared on Pt-buffered Si substrates can be beneficial to the application of YIG films to integrated devices.

Dates et versions

hal-03525733 , version 1 (14-01-2022)

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Citer

Xin Guo, Ying Chen, Genshui Wang, Jun Ge, Yuanyuan Zhang, et al.. Improved Performance of YIG (Y3Fe5O12) Films Grown on Pt-Buffered Si Substrates by Chemical Solution Deposition Technique. Journal of the American Ceramic Society, 2016, 99 (7), pp.2217-2220. ⟨10.1111/jace.14293⟩. ⟨hal-03525733⟩
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