Growth and characterization of yttrium iron garnet films on Si substrates by chemical solution deposition (CSD) technique - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of Alloys and Compounds Année : 2016

Growth and characterization of yttrium iron garnet films on Si substrates by chemical solution deposition (CSD) technique

Résumé

Yttrium Iron Garnet (YIG) films were prepared on Si substrates by Chemical Solution Deposition (CSD) technique using acetic acid and deionized water as solvents. Well-crystallized and crack-free YIG films were obtained when annealed at 750 oC and 850 oC respectively, showing a low surface roughness of several nanometers. When annealed at 750 oC for 30 mins, the saturated magnetization (Ms) and coercive field (Hc) of YIG films were 0.121 emu/mm3 (4πMs = 1.52 kGs) and 7 Oe respectively, which were similar to that prepared by PLD technique. The peak-to-peak linewidth of ferromagnetic resonance (FMR) was 220 Oe at 9.10 GHz. The results demonstrated that CSD was an excellent technique to prepare high quality yttrium iron garnet (YIG) films on silicon, which could provide a lower -cost way for large-scale production on Si-based integrated devices.
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Dates et versions

hal-03525725 , version 1 (14-01-2022)

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Xin Guo, Ying Chen, Genshui Wang, Yuanyuan Zhang, Jun Ge, et al.. Growth and characterization of yttrium iron garnet films on Si substrates by chemical solution deposition (CSD) technique. Journal of Alloys and Compounds, 2016, 671, pp.234-237. ⟨10.1016/j.jallcom.2016.02.072⟩. ⟨hal-03525725⟩
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