Ridge Polariton Laser: Different from a Semiconductor Edge-Emitting Laser
Résumé
We experimentally demonstrate the difference between a ridge polariton laser and a conventional edge-emitting ridge laser operating under electron-hole population inversion. The horizontal laser cavities are 20-60µm long GaN etched ridge structures with vertical Bragg refectors. We investigatethe laser threshold under optical pumping and assess quantitatively the effect of a varying optically-pumped length. The laser effect is achieved for an exciton reservoir length of just 15% of the cavity length, which would not be possible in a conventional ridge laser, with an inversionlesspolaritonic gain about 10 times larger than in equivalent GaN lasers. This combination of a very short injection section and a strong gain paves the way to compact microlasers with nonlinear functionalities for integrated photonics.
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Cite 10.57745/VCC5KV Jeu de données Guillet, Thierry; Souissi, Hassen; Gromovyi, Maksym; Gueye, Thiaka; Brimont, Christelle; Doyennette, Laetitia; Solnyshkov, Dmitry; Malpuech, Guillaume; Cambril, Edmond; Bouchoule, Sophie; Alloing, Blandine; Rennesson, Stéphanie; Semond, Fabrice; ZÚÑIGA-PÉREZ, Jesus, 2025, "Data associated with the article "Ridge polariton laser: different from a semiconductor edge-emitting laser"", https://doi.org/10.57745/VCC5KV, Recherche Data Gouv, V1