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Journal Articles Microelectronic Engineering Year : 2012

Local ion irradiation of thin graphene films grown on SiC substrates

Abstract

In this paper, we report on the surface patterning of punctual defects onto graphene films grown on 6H–SiC(0001) substrates, using a finely focused gallium (Ga+) ion beam. We present organized arrays of nano-defects, designed using ion doses in the range of 10 –1 × 106 Ga+ ions/dot. Using Conductive Atomic Force Microscopy (CAFM) and Raman spectroscopy we evidence the strong resilience of graphene towards ion irradiation and characterize the morphology and the electronic properties of the FIB-induced local nano-defects. We show that punctual ion irradiation and dose control allow progressive amorphization of graphene leading to the promising perspective of graphene-based tunable templates.

Dates and versions

hal-03513890 , version 1 (06-01-2022)

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Brigitte Prevel, J.-M. Benoit, L. Bardotti, P. Mélinon, A. Mayumi Sato, et al.. Local ion irradiation of thin graphene films grown on SiC substrates. Microelectronic Engineering, 2012, 98, pp.206-209. ⟨10.1016/j.mee.2012.07.025⟩. ⟨hal-03513890⟩
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