Non-volatile SRAM memory cells based on ReRAM technology - Archive ouverte HAL
Article Dans Une Revue SN Applied Sciences Année : 2020

Non-volatile SRAM memory cells based on ReRAM technology

Résumé

Static Random-Access Memories (SRAMs) are very common in today's chip industry due to their speed and power consumption but are classified as volatile memories. Non-Volatile SRAMs (nvSRAMs) combine SRAM features with non-volatility. This combination has the advantage to retain data after power off or in the case of power failure, enabling energy-efficient and reliable systems under frequent power-off conditions. In this work, several nvSRAMs architectures based on Oxide Random-Access Memory (OxRAM) technology are presented and compared. OxRAMs are non-volatile memories considered as a subset of Resistive RAM (ReRAM) technology.
Fichier principal
Vignette du fichier
SN.pdf (2.21 Mo) Télécharger le fichier
Origine Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-03504289 , version 1 (29-12-2021)

Identifiants

Citer

Hussein Bazzi, Adnan Harb, Hassen Aziza, Mathieu Moreau. Non-volatile SRAM memory cells based on ReRAM technology. SN Applied Sciences, 2020, 2 (9), ⟨10.1007/s42452-020-03267-z⟩. ⟨hal-03504289⟩
63 Consultations
145 Téléchargements

Altmetric

Partager

More