Density Enhancement of RRAMs using a RESET Write Termination for MLC Operation

Multi-Level Cell (MLC) technology can greatly reduce Resistive RAM (RRAM) die sizes to achieve a breakthrough in cost structure. In this paper, a novel design scheme is proposed to realize reliable and uniform MLC RRAM operation without the need of any read verification. MLC is implemented based on a strict control of the cell programming currents of 1T-1R HfO 2 -based RRAM cells. Specifically, a self-adaptive write termination circuit is proposed to control the RRAM RESET current. Eight different resistance states are obtained by varying the compliance current which is defined as the minimal current allowed by the termination circuit in the RESET direction.

Mots clés

RRAM OxRAM multi-level cell MLC QLC write termination variability current control

Domaines

Micro et nanotechnologies/Microélectronique

Fichier principal

electronics-10-02222-v2.pdf (5.41 Mo)

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https://hal.science/hal-03504284

Soumis le : mercredi 29 décembre 2021-01:10:58

Dernière modification le : lundi 10 juin 2024-16:58:03

Archivage à long terme le : mercredi 30 mars 2022-18:02:38

Dates et versions

hal-03504284 , version 1 (29-12-2021)

Licence

Paternité

Identifiants

HAL Id : hal-03504284 , version 1
DOI : 10.23919/DATE51398.2021.9473967

Citer

Hassen Aziza, Said Hamdioui, Moritz Fieback, Mottaqiallah Taouil, Mathieu Moreau, et al.. Density Enhancement of RRAMs using a RESET Write Termination for MLC Operation. Microelectronics Reliability, 2021, 126, pp.1877-1880. ⟨10.23919/DATE51398.2021.9473967⟩. ⟨hal-03504284⟩

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UNIV-TLN CNRS UNIV-AMU LIRMM IM2NP TEST LIRMM_MIC MIC MIPS UNIV-MONTPELLIER

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