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            <funder>M. D. acknowledges financial support from ANRT (Association Nationale Recherche Technologie) through a CIFRE grant N°2015/1042. Scanning Electron Microscopy imaging was performed in the CCLO-Renatech clean room facilities of Institut Foton. Equipment funding of Institut Foton was partly provided by the CPER Sophie.</funder>
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                <term xml:lang="en">Zinc sulphide</term>
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                <term xml:lang="en">Electron beam evaporation</term>
                <term xml:lang="en">Ion-assisted deposition</term>
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              <p>Germanium/Zinc Sulphide (Ge/ZnS) single and multilayers are deposited by ion assisted electron beam deposition on Silicon substrates for applications in the 2-15 µm wavelength region. Refractive indices of Ge and ZnS thin films are extracted from measured reflectance and transmittance spectra. Several types of mid-infrared filters (high-, anti-reflection coatings and dichroic filters) with a number of layers ranging from 3 to 29 are then designed and deposited. The optical responses of fabricated mid-infrared filters show a good agreement between experimental spectra and simulation in the case of high- and anti-reflection coatings in the long-wave infrared but also for dichroic filters with a low transmittance in the mid-wave infrared and broadband bandpass in the long-wave infrared.</p>
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