Optimized Infrared LED and its use in an all-HgTe Nanocrystal-based active imaging setup
Résumé
Nanocrystals have reached a high level of maturity, enabling their integration into optoelectronic devices. The next challenge is the combination of several types of devices into one complex system to achieve better on-chip integration. Here, we focus on an all-HgTe-nanocrystal active imaging setup operating in the shortwave infrared. We first focus on the design of an optimized infrared light emitting diode (LED). We show that a halide technology processing enables an increase of the electroluminescence signal by a factor of 3, while preserving a low turn-on voltage and a high brightness (3 W.sr-1 .m-2). We then unveil the degradation mechanism of this LED under continuous operation and show a shift from band edge to trap emission. This degradation process can be strongly reduced thanks to the encapsulation and the thermal control of the LED. Lastly, we image the infrared emission of the LED using a focal plane array whose active layer is also made of HgTe nanocrystals, paving the way for all-nanocrystal-based active imaging setups.
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