Novel and Innovative Interface as Potential Active Layer in Chem-FET Sensor Devices for the Specific Sensing of Cs+ - Archive ouverte HAL Access content directly
Journal Articles ACS Applied Materials & Interfaces Year : 2019

Novel and Innovative Interface as Potential Active Layer in Chem-FET Sensor Devices for the Specific Sensing of Cs+

Abstract

An innovative novel interface has been designed and developed to be used as a potential active layer in chemically sensitive field-effect transistor (Chem-FET) sensor devices for the specific sensing of Cs +. In this study, the synthesis of a specific Cs + probe based on calix[4]arene benzocrown ether, its photophysical properties, and its grafting onto a single lipid monolayer (SLM) recently used as an efficient ultrathin organic dielectric in Chem-FETs are reported simultaneously. On the basis of both optical and NMR titration experiments, the probe has shown high selectivity and specificity for Cs + compared to interfering cations, even if an admixture is used. Additionally, attenuated total reflectance mode Fourier transform infrared spectroscopy was successfully used to characterize and prove the efficient grafting of the probe onto a SLM and the formation of the innovative novel sensing layer.
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Dates and versions

hal-03454300 , version 1 (29-11-2021)

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Volkan Kilinc, Catherine Henry-De-Villeneuve, Tin Phan Nguy, Yutaka Wakayama, Anne M Charrier, et al.. Novel and Innovative Interface as Potential Active Layer in Chem-FET Sensor Devices for the Specific Sensing of Cs+. ACS Applied Materials & Interfaces, 2019, 11, pp.47635 - 47641. ⟨10.1021/acsami.9b18188⟩. ⟨hal-03454300⟩
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