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Article Dans Une Revue Vacuum Année : 2021

Further insights into the growth mechanism of the non-stoichiometric θ-Ni2Si phase

Résumé

The solid state reaction of 50 nm Ni with Si(100) substrate was investigated using in situ X-ray diffraction (XRD). The sequence is simultaneous; it begins by δ-Ni2Si phase then the metastable θ-Ni2Si phase is formed. Both phases grow simultaneously. The growth mechanism of the non-stoichiometric θ-Ni2Si phase is discussed on the basis of the evolution of its XRD peak during annealing. The results show that, during its growth, the non-stoichiometric θ-Ni2Si phase is split into two regions of different concentrations. This “original” behavior is justified by the discontinuous variation with composition of both the diffusion coefficient and the d-lattice spacing through the θ-Ni2Si phase.

Domaines

Matériaux
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Dates et versions

hal-03452320 , version 1 (26-11-2021)

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Paternité - Pas d'utilisation commerciale - Pas de modification

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Citer

G. Tellouche, D. Mangelinck, K. Hoummada, A. Derafa. Further insights into the growth mechanism of the non-stoichiometric θ-Ni2Si phase. Vacuum, 2021, 187, pp.110075. ⟨10.1016/j.vacuum.2021.110075⟩. ⟨hal-03452320⟩
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