A comparison of pad metallization in miniaturized microfabricated silicon microcantilever-based wafer probes for low contact force low skate on-wafer measurements
Khadim Daffe
(1)
,
Jaouad Marzouk
(1)
,
Christophe Boyaval
(1, 2)
,
Gilles Dambrine
(1, 3)
,
Kamel Haddadi
(1, 4)
,
S. Arscott
(1, 5)
1
IEMN -
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 CMNF - IEMN - Centrale de Micro Nano Fabrication - IEMN
3 ANODE - IEMN - Advanced NanOmeter DEvices - IEMN
4 CSAM - IEMN - Circuits Systèmes Applications des Micro-ondes - IEMN
5 NAM6 - IEMN - Nano and Microsystems - IEMN
2 CMNF - IEMN - Centrale de Micro Nano Fabrication - IEMN
3 ANODE - IEMN - Advanced NanOmeter DEvices - IEMN
4 CSAM - IEMN - Circuits Systèmes Applications des Micro-ondes - IEMN
5 NAM6 - IEMN - Nano and Microsystems - IEMN
Jaouad Marzouk
- Fonction : Auteur
- PersonId : 919509
Christophe Boyaval
- Fonction : Auteur
- PersonId : 747971
- IdHAL : christophe-boyaval
Gilles Dambrine
- Fonction : Auteur
- PersonId : 748125
- IdHAL : gilles-dambrine
Kamel Haddadi
- Fonction : Auteur
- PersonId : 745983
- IdHAL : kamel-haddadi
- ORCID : 0000-0002-4857-5220
- IdRef : 124600530
S. Arscott
Connectez-vous pour contacter l'auteur
- Fonction : Auteur correspondant
- PersonId : 739879
- IdHAL : stevearscott
- ORCID : 0000-0001-9938-2683
- IdRef : 144910691
Connectez-vous pour contacter l'auteur
Résumé
Miniaturized, microfabricated microelectromechanical systems (MEMS)-based wafer probes are used here to evaluate different contact pad metallization at low tip forces (1000 Nm-1) and small contact pads enabled us to show that it is the length of the pad (in contact with the surface) which determines the contact resistivity rather than the total contact pad area.
Domaines
Sciences de l'ingénieur [physics]Format du dépôt | Fichier |
---|---|
Type de dépôt | Article dans une revue |
Titre |
en
A comparison of pad metallization in miniaturized microfabricated silicon microcantilever-based wafer probes for low contact force low skate on-wafer measurements
|
Résumé |
en
Miniaturized, microfabricated microelectromechanical systems (MEMS)-based wafer probes are used here to evaluate different contact pad metallization at low tip forces (<mN) and low skate on the on-wafer pads. The target application is low force RF probes for on-wafer measurements which cause minimal damage to both probes and pads. Low force enables the use of softer, more conductive metallisation. We have studied four different thin film contact pad metals based on their thin film electrical resistivity and micro-hardness: gold, nickel, molybdenum, and chromium. The contact pads sizes were micrometre (1.9×1.9 µm2) and sub-micrometre (0.6×0.6 µm2). The contact resistance of Au-Au, Ni-Au, Mo-Au, and Cr-Au was measured as a function of tip deflection. The tip force (loading) of the contacts was evaluated from the deflection of the cantilever. It was observed that an overtravel of 300 nm resulting in a contact force of ~400 µN was sufficient to achieve a contact resistance <1 Ω for a sub-micrometre gold contact pad. Our results are compared with an analytical model of contact resistance in loaded metal-metal contacts—a reasonable fit was found. A larger contact resistance was observed for the other metals—but their hardness may be advantageous when probing other materials. Using a combination of a rigid silicon cantilever (>1000 Nm-1) and small contact pads enabled us to show that it is the length of the pad (in contact with the surface) which determines the contact resistivity rather than the total contact pad area.
|
Auteur(s) |
Khadim Daffe
1
, Jaouad Marzouk
1
, Christophe Boyaval
1, 2
, Gilles Dambrine
1, 3
, Kamel Haddadi
1, 4
, S. Arscott
1, 5
1
IEMN -
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
( 1066983 )
- [Univ. Lille, CNRS, Centrale Lille Institut, Junia, Univ. Polytechnique Hauts-de-France] ––
Laboratoire Central – Cité Scientifique – Avenue Poincaré – CS 60069 – 59652 VILLENEUVE D’ASCQ CEDEX
- France
2
CMNF - IEMN -
Centrale de Micro Nano Fabrication - IEMN
( 1067406 )
- Groupe Centrale de Micro Nano Fabrication CMNF - IEMN UMR8520 -
Membre du réseau RENATECH des grandes centrales de Micro Nano Fabrication
- France
3
ANODE - IEMN -
Advanced NanOmeter DEvices - IEMN
( 1067380 )
- Groupe ANODE (Composants et dispositifs nanométriques) - IEMN LCI - Avenue Poincaré - CS 60069
59650 Villeneuve d'Ascq
- France
4
CSAM - IEMN -
Circuits Systèmes Applications des Micro-ondes - IEMN
( 1067382 )
- Groupe CSAM - IEMN
- CCHB IRCICA - 50 Avenue Halley - 59650 Villeneuve d'Ascq
- France
5
NAM6 - IEMN -
Nano and Microsystems - IEMN
( 1066996 )
- Groupe NAM6 - (Micro et Nano Systèmes) - IEMN UMR8520
- France
|
Langue du document |
Anglais
|
Vulgarisation |
Non
|
Comité de lecture |
Oui
|
Audience |
Internationale
|
Date de publication électronique |
2021-11-24
|
Volume |
32
|
Page/Identifiant |
015007
|
Nom de la revue |
|
Date de publication |
2022-01
|
Numéro |
1
|
Domaine(s) |
|
Collaboration/Projet |
|
Référence interne |
|
Projet(s) ANR |
|
Financement |
|
DOI | 10.1088/1361-6439/ac3cd7 |
Origine :
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