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Communication Dans Un Congrès Année : 2021

One stage gain boosted power driver at 184 GHz in 28 nm FD-SOI CMOS

Résumé

In order to improve amplifiers’ power gain for a close to fmax operation, a methodology to size the embedding of any active two port is described and then applied to the design of a single-stage amplifier as a proof of concept. The 184 GHz measured 28 nm FD-SOI CMOS amplifier presents a power gain of 7.6 dB, a bandwidth of 20 GHz, a Psat of -3.7 dBm and a peak PAE of 4.2 % for a power consumption of 5.1 mW.
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Dates et versions

hal-03432272 , version 1 (17-11-2021)

Identifiants

Citer

Sebastien Sadlo, Magali de Matos, Andreia Cathelin, Nathalie Deltimple. One stage gain boosted power driver at 184 GHz in 28 nm FD-SOI CMOS. 2021 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Jun 2021, Atlanta, United States. pp.119-122, ⟨10.1109/RFIC51843.2021.9490441⟩. ⟨hal-03432272⟩
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