Sub-nT resolution of Single Layer Sensor Based on the AMR Effect in La2/3Sr1/3MnO3 Thin Films - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue IEEE Transactions on Magnetics Année : 2021

Sub-nT resolution of Single Layer Sensor Based on the AMR Effect in La2/3Sr1/3MnO3 Thin Films

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hal-03431579 , version 1 (16-11-2021)

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Luiz Guilherme Enger, Stephane Flament, Imtiaz-Noor Bhatti, Bruno Guillet, Marc Lam Chok Sing, et al.. Sub-nT resolution of Single Layer Sensor Based on the AMR Effect in La2/3Sr1/3MnO3 Thin Films. IEEE Transactions on Magnetics, 2021, pp.1-1. ⟨10.1109/TMAG.2021.3089373⟩. ⟨hal-03431579⟩
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