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Article Dans Une Revue ACS Applied Materials & Interfaces Année : 2021

Dry-Etching Processes for High-Aspect-Ratio Features with Sub-10 nm Resolution High-χ Block Copolymers

Xavier Chevalier
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Résumé

Directed self-assembly of block copolymers (BCP) is a very attractive technique for the realization of functional nanostructures at high resolution. In this work, we developed full dry-etching strategies for BCP nanolithography using an 18 nm pitch lamellar silicon-containing block copolymer. Both an oxidizing Ar/O2 plasma and a nonoxidizing H2/N2 plasma are used to remove the topcoat material of our BCP stack and reveal the perpendicular lamellae. Under Ar/O2 plasma, an interfacial layer stops the etch process at the topcoat/BCP interface, which provides an etch-stop but also requires an additional CF4-based breakthrough plasma for further etching. This interfacial layer is not present in H2/N2. Increasing the H2/N2 ratio leads to more profound modifications of the silicon-containing lamellae, for which a chemistry in He/N2/O2 rather than Ar/O2 plasma produces a smoother and more regular lithographic mask. Finally, these features are successfully transferred into silicon, silicon-on-insulator, and silicon nitride substrates. This work highlights the performance of a silicon-containing block copolymer at 18 nm pitch to pattern relevant hard-mask materials for various applications, including microelectronics.
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Dates et versions

hal-03419581 , version 1 (15-11-2021)

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Gwenaelle Pound-Lana, Philippe Bézard, Camille Petit-Etienne, Sébastien Cavalaglio, Gilles Cunge, et al.. Dry-Etching Processes for High-Aspect-Ratio Features with Sub-10 nm Resolution High-χ Block Copolymers. ACS Applied Materials & Interfaces, 2021, 13 (41), pp.49184-49193. ⟨10.1021/acsami.1c13503⟩. ⟨hal-03419581⟩
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