Cathodoluminescence and electrical study of vertical GaN-on-GaN Schottky diodes with dislocation clusters - Archive ouverte HAL
Journal Articles Journal of Crystal Growth Year : 2020

Cathodoluminescence and electrical study of vertical GaN-on-GaN Schottky diodes with dislocation clusters

Thi Huong Ngo
  • Function : Author
Rémi Comyn
Eric Frayssinet
  • Function : Author
Hyonju Chauveau
  • Function : Author
Sébastien Chenot
  • Function : Author
Benjamin Damilano
Centre de recherche sur l'hétéroepitaxie et ses applications
Florian Tendille
  • Function : Author
Bernard Beaumont
  • Function : Author
Jean-Pierre Faurie
  • Function : Author
Nabil Nahas
  • Function : Author
Yvon Cordier

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Physics [physics]
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https://hal.science/hal-03418915

Submitted on : Tuesday, November 9, 2021-9:39:06 AM

Last modification on : Friday, March 1, 2024-6:20:03 PM

Long-term archiving on : Thursday, February 10, 2022-6:18:36 PM

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hal-03418915 , version 1 (09-11-2021)

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Thi Huong Ngo, Rémi Comyn, Eric Frayssinet, Hyonju Chauveau, Sébastien Chenot, et al.. Cathodoluminescence and electrical study of vertical GaN-on-GaN Schottky diodes with dislocation clusters. Journal of Crystal Growth, 2020, 552, pp.125911. ⟨10.1016/j.jcrysgro.2020.125911⟩. ⟨hal-03418915⟩

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