1550 nm InAs QD on InP for VECSEL and MECSEL applications
Résumé
We report on the growth optimization of 1550 nm InAs QD grown on InP substrates used as gain medium within Vertical or Membrane External Cavity Surface Emitting Lasers (VECSEL and MECSEL). High gain structures have been successfully realized. Laser operation at 1520 nm and at room temperature is obtained, high output power (2.2 W) and large wavelength tuning (86 nm) are demonstrated.
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