Power measurement setup development for on-wafer characterization at 185-191 GHz
Résumé
This article presents off-wafer scalar power setup dedicated to load-pull measurement for characterization of on-wafer active devices between 185 and 191 GHz. The system architecture allows us to determine the absorbed input power, the output power delivered to the load, the power added efficiency and the power gain of a device. Preliminary measurements achieved on integrated tuner on silicon proves the potentiality of the test bench: an accuracy of +/- 0.5 dB is obtained from -20 to 8 dBm of injected power at the input plane of the integrated device under test and detections of the reflected and output powers are realized from -25 to 5 dBm and from -35 to 13 dBm respectively.