Fast cut-off, low I 2 T and high temperature monolithic on-chip fuse on silicon substrate for new fail-safe embedded power switch - Archive ouverte HAL Access content directly
Journal Articles Microelectronics Reliability Year : 2021

Fast cut-off, low I 2 T and high temperature monolithic on-chip fuse on silicon substrate for new fail-safe embedded power switch

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Abstract

In this paper, a first concept of monolithic semiconductor fuses on silicon substrate, is realized and experimentally characterized. These new compact devices are, able to perform fast and irreversible current cutoff at medium voltage (200V), relatively high current (10A), with very low pre-arcing time (~ 4 µs to 5 µs). The fuses are intended for fail-safe power converter capabilities applications. Design and 3D simulation by finite elements method, taking into account static and dynamic specifications have been carried out. Thermal management in steady state is improved by dielectric epoxy thermal insulation under each constriction of the fuse. Implementation and practical tests are reported.
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Dates and versions

hal-03381413 , version 1 (16-10-2021)

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Amirouche Oumaziz, Emmanuel Sarraute, Frédéric Richardeau, Abdelhakim Bourennane, Céline Combettes, et al.. Fast cut-off, low I 2 T and high temperature monolithic on-chip fuse on silicon substrate for new fail-safe embedded power switch. Microelectronics Reliability, 2021, pp.114240. ⟨10.1016/j.microrel.2021.114240⟩. ⟨hal-03381413⟩
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