This paper focuses on the enhancement of the robustness level of SiC MOSFET during short-circuit conditions. In this study, two approaches allowing to ensure safe "Fail-To-Open" (FTO) mode in planar power SiC MOSFET devices under shortcircuit operation are presented. These approaches are based on direct depolarization of the gate source voltage and its estimation from the calculation of the critical dissipated power (W/mm²) between FTO and classical unsafe thermal runaway. They allow to determine the maximum value of the gate source voltage to preserve a FTO mode under a drain source voltage close to the nominal value i.e VBRmin / 2. The boundary of the power density between FTO and "Fail-To-Short" (FTS) is introduced. A complete experimentation of the two failure modes in competition that may appear during short-circuit (SC) test of 1.2 kV SiC MOSFETs is presented. Finally, the penalty of the gate source voltage depolarization on the on-state resistance (Rds(on)) is investigated in order to evaluate the techniques efficiency.