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Communication Dans Un Congrès Année : 2021

An advanced ageing methodology for robustness assessment of normally-off AlGaN/GaN HEMT

Résumé

The semi-on-state reliability of normally-off AlGaN/GaN high electron mobility transistor fabricated by fluorine ion plasma implantation technology is reported, focusing on an advanced dc step-stress methodology. By inserting a non-stressful fixed-bias step between each stress step, a reliable in-situ monitoring of gate and drain current degradations can be achieved without the use of conventional I-V interim measurements. A negative shift of the threshold voltage leading to an increase of the drain current is observed after the stress sequence carried out in semi-on-state regime. Currents monitoring during non-stressful steps reveal no permanent degradation up to stress step at VDS ˜ 19.5V and a self-healing mechanism occurring during non-stressful steps. By avoiding intermediate I-V control measurements after each stress step, this methodology provides a safe in-situ monitoring of degradations.
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Dates et versions

hal-03362260 , version 1 (01-10-2021)

Identifiants

  • HAL Id : hal-03362260 , version 1
  • WOS : 000654861200060

Citer

F. Albany, A. Curutchet, N. Labat, F. Lecourt, E. Walasiak, et al.. An advanced ageing methodology for robustness assessment of normally-off AlGaN/GaN HEMT. 15th European Microwave Integrated Circuits Conference, EuMIC 2020, Jan 2021, Utrecht, Netherlands. 237-240, https://ieeexplore.ieee.org/abstract/document/9337362. ⟨hal-03362260⟩
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