Recently, low-power analog switches have been enjoying rapidly growing interest owing to their proliferation in mobile and reconfigurable communication and connectivity systems often with multiple-input-multiple-output architecture [1] , [2] . To develop this ideal switch, non-volatile switches based on memory devices have been investigated with the potential of zero static power dissipation [3] - [6] . In order to attain a high figure-of-merit cutoff frequency (F_CO=1/2πR_ON C_OFF), RF switches with low ON-state resistance to minimize insertion loss, and low OFF-state capacitance for maximum isolation are desirable.