Characterization of 4 kV Charge-Balanced SiC MOSFETs
Résumé
This work demonstrates a novel charge-balanced (CB) silicon carbide (SiC) MOSFET that boasts a specific on-resistance of 10 mΩ•cm 2 at 4 kV breakdown voltage, surpassing the 1-D SiC unipolar limit. This is achieved through buried p-doped regions inside the drift layers, which are more easily scalable to higher voltages compared to the p-doped pillars used in super-junction (SJ) devices. Medium-voltage CB SiC MOSFETs with different p-doped bus widths and pitches have been fabricated and characterized in this work. The unique microstructure of these devices causes interesting macro-scale characteristics, such as distinctive steps in the capacitance-voltage curves and a turn-on voltage tail that reduces with increased temperature. The switching energy of the CB MOSFET is 92% lower than that of an IGBT at 150 °C. This paper presents and interprets these intriguing static and dynamic characteristics.
Domaines
Energie électrique
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Knoll - 2021 - Characterization of 4_5 kV Charge-Balanced SiC MOSFETs.pdf (2.03 Mo)
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