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Article Dans Une Revue Electronics Année : 2021

Active Gate Driver and Management of the Switching Speed of GaN Transistors during Turn-On and Turn-Off

Résumé

The paper investigates the management of drain voltage and current slew rates (i.e., dv/dt and di/dt) of high-speed GaN-based power switches during the transitions. An active gate voltage control (AGVC) is considered for improving the safe operation of a switching cell. In an application of open-loop AGVC, the switching speeds vary significantly with the operating point of the GaN HEMT on either or both current and temperature. A closed-loop AGVC is proposed to operate the switches at a constant speed over different operating points. In order to evaluate the reduction in the electromagnetic disturbances, the common mode currents in the system were compared using the active and a standard gate voltage control (SGVC). The closed-loop analysis carried out in this paper has shown that discrete component-based design can introduce limitations to fully resolve the problem of high switching speeds. To ensure effective control of the switching operations, a response time fewer than 10 ns is required for this uncomplex closed-loop technique despite an increase in switching losses.
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hal-03341258 , version 1 (10-09-2021)

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Mamadou Lamine Beye, Thilini Wickramasinghe, Jean François Mogniotte, Luong Viêt Phung, Nadir Idir, et al.. Active Gate Driver and Management of the Switching Speed of GaN Transistors during Turn-On and Turn-Off. Electronics, 2021, 10 (2), pp.106. ⟨10.3390/electronics10020106⟩. ⟨hal-03341258⟩
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