GaN-based HEMTs operating as zero-bias microwave detectors at low temperature - Archive ouverte HAL Access content directly
Conference Papers Year : 2021
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hal-03340956 , version 1 (10-09-2021)

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  • HAL Id : hal-03340956 , version 1

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G. Paz, I. Iniguez de La Torre, H. Sanchez, Virginie Hoel, Y. Cordier, et al.. GaN-based HEMTs operating as zero-bias microwave detectors at low temperature. 13th Spanish Conference on Electron Devices, CDE 2021, Jun 2021, Seville, Spain. ⟨hal-03340956⟩
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