Doping effect on nanoscopic and macroscopic electrical properties of Barium Zirconate Titanate thin films
Résumé
Lead-free Barium Zirconate Titanate thin films synthesized by sol-gel process were deposited on platinized silicon substrates. Atomic and piezoresponse force microscopies analysis have revealed low values for the surface roughness and local piezoelectric loops, respectively. Nanoscopic piezoelectric and ferroelectric properties decrease with zirconium content increasing. Dielectric measurements were made up to 1 MHz at room temperature. The highest dielectric permittivity and tunability are obtained for 10% of zirconium. Dielectric loss tangent decreases with frequency, zirconium content and electric field increasing. Thin films with 20% of zirconium could be particularly interesting for electronic applications.
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Doping effect on nanoscopic and macroscopic electrical properties of Barium Zirconate Titanate thin films.pdf (2.3 Mo)
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