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Communication Dans Un Congrès Année : 2016

Graphene field effect transistors on flexible substrate : stable process and high RF performance

Résumé

We report a simple and low temperature fabrication process suitable for flexible substrate based graphene field effect transistors (GFETs). Transistors with 300 nm gate length and different channel width (12 mu m and 24 mu m) were successfully fabricated on Kapton substrate. We report asmeasured current gain cut-off frequency of 27 GHz and maximum oscillation frequency of 12 GHz. The high performance transistors with high yield in this work demonstrate the great potential of our full process for flexible GFETs.
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Dates et versions

hal-03335833 , version 1 (06-09-2021)

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Wei Wei, Emiliano Pallecchi, Mohamed Moez Belhaj, Alba Centeno, Amaia Zurutuza, et al.. Graphene field effect transistors on flexible substrate : stable process and high RF performance. 11th European Microwave Integrated Circuits Conference, EuMIC 2016, Oct 2016, London, United Kingdom. pp.165-168, ⟨10.1109/EuMIC.2016.7777516⟩. ⟨hal-03335833⟩
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