InAlAs/InGaAs-MSM photodetectors based on optical cavity using metallic mirrors: THz frequency operation, high quantum efficiency and high saturation current - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Applied Physics Letters Année : 2019

InAlAs/InGaAs-MSM photodetectors based on optical cavity using metallic mirrors: THz frequency operation, high quantum efficiency and high saturation current

Résumé

We present a metallic mirror-based resonant cavity-enhanced InAlAs/InGaAs metal-semiconductor-metal (InAlAs/InGaAs-MSM) photodetector driven by a 1550 nm wavelength illumination. The device shows a quantum efficiency higher than 30 %, a cutoff frequency higher than 100 GHz and a saturation current density above 40 kA/cm 2. As a proof of concept, we demonstrate the generation of 0.25 mW of continuous wave output power at a frequency of 100 GHz via the photomixing of an optical beatnote. This result underlines the potential of InAlAs/InGaAs-MSM for sub-THz and THz optoelectronics applications driven by telecom lasers.
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hal-03324947 , version 1 (24-08-2021)

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Maximilien Billet, Sara Bretin, Fuanki Bavedila, Vanessa Avramovic, Xavier Wallart, et al.. InAlAs/InGaAs-MSM photodetectors based on optical cavity using metallic mirrors: THz frequency operation, high quantum efficiency and high saturation current. Applied Physics Letters, 2019, 114 (16), pp.161104. ⟨10.1063/1.5092283⟩. ⟨hal-03324947⟩
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