A 30.1 mW/µm2 SiGe:C HBT featuring an implanted collector in a 55-nm CMOS node - Archive ouverte HAL
Article Dans Une Revue IEEE Electron Device Letters Année : 2020

A 30.1 mW/µm2 SiGe:C HBT featuring an implanted collector in a 55-nm CMOS node

Résumé

This letter deals with the load-pull measurements at 94 GHz of 450 GHz Si/SiGe f(T) HBTs. On the one hand the technological modifications performed to improve large signal performances are presented and on the other hand, load-pullmeasurements are presented after having describing the measurement setup. A state-of-the-art 30.1 mW / mu m(2) Si/SiGe HBT is demonstrated thanks to a layout optimization.

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Sciences de l'ingénieur [physics]

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https://hal.science/hal-03322806

Soumis le : jeudi 19 août 2021-18:02:17

Dernière modification le : mercredi 24 janvier 2024-09:54:18

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Dates et versions

hal-03322806 , version 1 (19-08-2021)

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Citer

A. Gauthier, Walid Aouimeur, Etienne Okada, Nicolas Guitard, Pascal Chevalier, et al.. A 30.1 mW/µm2 SiGe:C HBT featuring an implanted collector in a 55-nm CMOS node. IEEE Electron Device Letters, 2020, 41 (1), pp.12-14. ⟨10.1109/LED.2019.2954600⟩. ⟨hal-03322806⟩

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