Extraction of nonlinear Taylor series coefficients for GaN HEMT over multi-bias condition - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Microelectronics Journal Année : 2020

Extraction of nonlinear Taylor series coefficients for GaN HEMT over multi-bias condition

Résumé

Taylor Series coefficients (TSCs) are one of the main factors behind the device's nonlinearity. Mull-bias behaviour of TSCs for GaN HEMT has been extracted using two-tone technique. To extract the higher-order TSCs of the output current, two-tone intermodulation distortion (IMD) measurement along with properly designed load impedance is used at low frequency (50 and 51 MHz) for the accurate prediction of the cross-term derivatives. For the extraction of TSCs of the nonlinear output current, Volterra series analysis is utilized for the accurate reproduction of the harmonic component. Finally, the verification between the measured and simulated IMD products shows good agreement. This simple and straightforward method is utilized successfully for nonlinearity analysis.
Fichier non déposé

Dates et versions

hal-03321569 , version 1 (17-08-2021)

Identifiants

Citer

Mohammad A. Alim, A. Tahsin, Ali A. Rezazadeh, Christophe Gaquière. Extraction of nonlinear Taylor series coefficients for GaN HEMT over multi-bias condition. Microelectronics Journal, 2020, 96, 104700, 6 p. ⟨10.1016/j.mejo.2020.104700⟩. ⟨hal-03321569⟩
15 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More