Analysis of trap states in AlGaN/GaN self-switching diodes via impedance measurements - Archive ouverte HAL Access content directly
Conference Papers Microelectronics Reliability Year : 2020

Analysis of trap states in AlGaN/GaN self-switching diodes via impedance measurements

E. Perez-Martin
  • Function : Author
D. Vaquero
  • Function : Author
H. Sanchez-Martin
  • Function : Author
V. J. Raposo
  • Function : Author
T. Gonzalez
J. Mateos
I. Iniguez-De-La-Torre
  • Function : Author

Abstract

The presence of trap states in self-switching diodes (SSD) based on an AlGaN/GaN heterojunction has been identified by means of their AC characterization between 75 kHz to 30 MHz in a wide temperature range, from 80 K to 300 K. Measurements allow us to determine two different characteristic energies of the traps, 12 meV and 61 meV, being associated to a distribution of surface states and one discrete bulk trap, respectively. The impact of the trapping effects on microwave detection at zero-bias has also been analyzed in the same temperature range, the measured responsivity showing an unusual enhancement and a low-frequency roll-off at low temperatures.

Dates and versions

hal-03321561 , version 1 (17-08-2021)

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E. Perez-Martin, D. Vaquero, H. Sanchez-Martin, Christophe Gaquière, V. J. Raposo, et al.. Analysis of trap states in AlGaN/GaN self-switching diodes via impedance measurements. 31st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2020, Oct 2020, Athens, Greece. Microelectron. Reliab. 114, Special issue, 113806, ⟨10.1016/j.microrel.2020.113806⟩. ⟨hal-03321561⟩
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