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Communication Dans Un Congrès Année : 2018

[Invited] Current status and challenges of GaN millimeter-wave transistors

Résumé

In this work, we show that a careful architecture of buffer layers should be employed in order to perform high performance millimeter-wave GaN devices. The use of higher bias operation (VDS ≥ 20 V) will be possible while using short gate length only if the thermal resistance induced by the buffer layers is reduced. In particular, it is shown that a thick AlGaN back barrier (DHFET structure) results in a huge drop of the PAE at VDS = 25V despite the pulsed mode conditions. With an enhanced thermal dissipation as compared to the DHFET, the carbon-doped structure delivers much higher performances illustrated by a state-of-the-art combination of PAE (> 50%) and an output power density of 7 W/mm at 40 GHz and VDS = 25V.
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Dates et versions

hal-03287817 , version 1 (15-07-2021)

Identifiants

  • HAL Id : hal-03287817 , version 1

Citer

Riad Kabouche, Romain Pecheux, Malek Zegaoui, F Medjdoub. [Invited] Current status and challenges of GaN millimeter-wave transistors: [Invited]. GaN Marathon 2.0, Apr 2018, Padova, Italy. ⟨hal-03287817⟩
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