GaN-based switches will offer greater efficiency, power handling, and compactness as compared to the well-established, widely available silicon MOSFET power devices-all factors that are critical to meeting the needs of today's systems. However, the vertical breakdown voltage of GaN-on-silicon heterostructures is currently limited to slightly above 1000 V, preventing to benefit from this technology for higher voltage applications. This talk will discuss some potential solutions for next generation lateral GaN-on-Silicon power devices targeting 1200 V and above. Several ways through the improvement of the epi-layers or the processing combined with the use of ultra wide bandgap in order to push the limits of the blocking voltage while maintaining low trapping effects will be described. This would pave the way to much lower on-resistance than other existing technologies operating above 1 kV.